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GermanyIRF630NLPBF
Resumen del número de pieza
Número de pieza del fabricante
IRF630NLPBF
Explicación
MOSFET N-CH 200V 9.3A TO262
Descripción detallada
N-Channel 200 V 9.3A (Tc) 82W (Tc) Through Hole TO-262
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
IRF630NLPBF Models
Embalaje estándar
50
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
575 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
82W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
SP001559690
*IRF630NLPBF
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF630NLPBF
Documentos y medios de comunicación
Datasheets
1(IRF630N)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF630N)
EDA Models
1(IRF630NLPBF Models)
Cantidad y precio
-
Alternativas
-