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GermanyBSB012N03LX3 G
Resumen del número de pieza
Número de pieza del fabricante
BSB012N03LX3 G
Explicación
MOSFET N-CH 30V 39A/180A 2WDSON
Descripción detallada
N-Channel 30 V 39A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
5,000
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
169 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
16900 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2, CanPAK M™
Package / Case
3-WDSON
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
BSB012N03LX3G
BSB012N03LX3 G-ND
SP000597846
BSB012N03LX3 GDKR-ND
BSB012N03LX3 GDKR
BSB012N03LX3GTR
BSB012N03LX3 GCT
BSB012N03LX3GXT
BSB012N03LX3GDKR
BSB012N03LX3GXUMA1
BSB012N03LX3 GTR-ND
BSB012N03LX3 GCT-ND
BSB012N03LX3GCT
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSB012N03LX3 G
Documentos y medios de comunicación
Datasheets
1(BSB012N03LX3 G)
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HTML Datasheet
1(BSB012N03LX3 G)
Cantidad y precio
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Alternativas
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