English
China
Rusia
Italy
GermanyAUIRF7738L2TR
Resumen del número de pieza
Número de pieza del fabricante
AUIRF7738L2TR
Explicación
MOSFET N-CH 40V 35A DIRECTFET
Descripción detallada
N-Channel 40 V 35A (Ta), 130A (Tc) 3.3W (Ta), 94W (Tc) Surface Mount DIRECTFET L6
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
4,000
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta), 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 109A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
194 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7471 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.3W (Ta), 94W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET L6
Package / Case
DirectFET™ Isometric L6
Base Product Number
AUIRF7738
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
-
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRF7738L2TR
Documentos y medios de comunicación
Datasheets
1(AUIRF7738L2TR(1))
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(AUIRF7738L2TR(1))
Cantidad y precio
-
Alternativas
-