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GermanyIPU50R950CEAKMA1
Resumen del número de pieza
Número de pieza del fabricante
IPU50R950CEAKMA1
Explicación
MOSFET N-CH 500V 4.3A TO251-3
Descripción detallada
N-Channel 500 V 4.3A (Tc) 53W (Tc) Through Hole PG-TO251-3
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
1,500
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id
3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
231 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
53W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
IPU50R
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
2156-IPU50R950CEAKMA1-IT
SP001292872
INFINFIPU50R950CEAKMA1
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPU50R950CEAKMA1
Documentos y medios de comunicación
Datasheets
1(IPD50R950CE, IPU50R950CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPD50R950CE, IPU50R950CE)
Cantidad y precio
-
Alternativas
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