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GermanyIRF9952PBF
Resumen del número de pieza
Número de pieza del fabricante
IRF9952PBF
Explicación
MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Descripción detallada
Mosfet Array 30V 3.5A, 2.3A 2W Surface Mount 8-SO
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
95
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.5A, 2.3A
Rds On (Max) @ Id, Vgs
100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 15V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
IRF995
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
SP001566518
2156-IRF9952PBF
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRF9952PBF
Documentos y medios de comunicación
Datasheets
1(IRF9952PbF)
Other Related Documents
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PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF9952PbF)
Cantidad y precio
-
Alternativas
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