English
China
Rusia
Italy
GermanyIRF7521D1
Resumen del número de pieza
Número de pieza del fabricante
IRF7521D1
Explicación
MOSFET N-CH 20V 2.4A MICRO8
Descripción detallada
N-Channel 20 V 2.4A (Ta) 1.3W (Ta) Surface Mount Micro8™
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
IRF7521D1 Models
Embalaje estándar
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
FETKY™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
135mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 15 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro8™
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Clasificaciones medioambientales y de exportación
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
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Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7521D1
Documentos y medios de comunicación
Datasheets
1(IRF7521D1)
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1(IRF7521D1 Models)
Cantidad y precio
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Alternativas
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