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Italy
GermanyRN1706JE(TE85L,F)
Resumen del número de pieza
Número de pieza del fabricante
RN1706JE(TE85L,F)
Explicación
TRANS 2NPN PREBIAS 0.1W ESV
Descripción detallada
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV
Fabricación
Toshiba Semiconductor and Storage
Plazo de entrega estándar
Modelo edacad
RN1706JE(TE85L,F) Models
Embalaje estándar
4,000
Inventario de proveedores
Atributos del producto
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Cut Tape (CT)
Product Status
Active
Transistor Type
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-553
Supplier Device Package
ESV
Base Product Number
RN1706
Clasificaciones medioambientales y de exportación
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Otros nombres
RN1706JE(TE85LF)DKR
RN1706JE(TE85LF)CT
RN1706JE(TE85LF)TR
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Toshiba Semiconductor and Storage RN1706JE(TE85L,F)
Documentos y medios de comunicación
Datasheets
1(RN1701JE-06JE)
EDA Models
1(RN1706JE(TE85L,F) Models)
Cantidad y precio
-
Alternativas
-