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Resumen del número de pieza
Número de pieza del fabricante
NTD4909NT4G
Explicación
MOSFET N-CH 30V 8.8A/41A DPAK
Descripción detallada
N-Channel 30 V 8.8A (Ta), 41A (Tc) 1.37W (Ta), 29.4W (Tc) Surface Mount DPAK
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
NTD4909NT4G Models
Embalaje estándar
2,500
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8.8A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1314 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.37W (Ta), 29.4W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
NTD4909
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
2832-NTD4909NT4GTR
NTD4909NT4GOSTR
NTD4909NT4GOSCT
ONSONSNTD4909NT4G
NTD4909NT4GOSDKR
NTD4909NT4G-ND
2156-NTD4909NT4G-OS
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4909NT4G
Documentos y medios de comunicación
Datasheets
1(NTD4909N)
Environmental Information
()
PCN Assembly/Origin
1(Mult Devices 29/Aug/2017)
HTML Datasheet
1(NTD4909N)
EDA Models
1(NTD4909NT4G Models)
Cantidad y precio
-
Alternativas
-