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GermanyIRF9953TRPBF
Resumen del número de pieza
Número de pieza del fabricante
IRF9953TRPBF
Explicación
MOSFET 2P-CH 30V 2.3A 8SO
Descripción detallada
Mosfet Array 30V 2.3A 2W Surface Mount 8-SO
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
4,000
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
2.3A
Rds On (Max) @ Id, Vgs
250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 15V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
IRF995
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
*IRF9953TRPBF
IRF9953PBFTR
IRF9953PBFDKR
SP001555962
IRF9953TRPBFTR-ND
IRF9953TRPBF-ND
IRF9953PBFCT
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRF9953TRPBF
Documentos y medios de comunicación
Datasheets
1(IRF9953)
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PCN Other
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HTML Datasheet
1(IRF9953)
Cantidad y precio
-
Alternativas
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