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GermanyIRFU2905ZPBF
Resumen del número de pieza
Número de pieza del fabricante
IRFU2905ZPBF
Explicación
MOSFET N-CH 55V 42A IPAK
Descripción detallada
N-Channel 55 V 42A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
75
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
*IRFU2905ZPBF
SP001550254
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU2905ZPBF
Documentos y medios de comunicación
Datasheets
1(IRF(R,U)2905ZPbF)
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HTML Datasheet
1(IRF(R,U)2905ZPbF)
Cantidad y precio
-
Alternativas
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