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GermanyIRFSL4321PBF
Resumen del número de pieza
Número de pieza del fabricante
IRFSL4321PBF
Explicación
MOSFET N-CH 150V 85A TO262
Descripción detallada
N-Channel 150 V 85A (Tc) 350W (Tc) Through Hole TO-262
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
50
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4460 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
-
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFSL4321PBF
Documentos y medios de comunicación
Datasheets
1(IRFS(L)4321PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFS(L)4321PbF)
Cantidad y precio
-
Alternativas
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