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GermanyNTMS3P03R2
Resumen del número de pieza
Número de pieza del fabricante
NTMS3P03R2
Explicación
MOSFET P-CH 30V 2.34A 8SOIC
Descripción detallada
P-Channel 30 V 2.34A (Ta) 730mW (Ta) Surface Mount 8-SOIC
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
NTMS3P03R2 Models
Embalaje estándar
2,500
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 24 V
FET Feature
-
Power Dissipation (Max)
730mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
NTMS3P
Clasificaciones medioambientales y de exportación
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Otros nombres
ONSONSNTMS3P03R2
2156-NTMS3P03R2-ONTR
NTMS3P03R2OS
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMS3P03R2
Documentos y medios de comunicación
Datasheets
1(NTMS3P03R2)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 20/Aug/2008)
PCN Design/Specification
1(Multiple Devices Copper Wire 20/Aug/2008)
HTML Datasheet
1(NTMS3P03R2)
EDA Models
1(NTMS3P03R2 Models)
Cantidad y precio
-
Alternativas
-