English
China
Rusia
Italy
GermanyCTLDM304P-M832DS TR
Resumen del número de pieza
Número de pieza del fabricante
CTLDM304P-M832DS TR
Explicación
MOSFET 2P-CH 30V 4.2A TLM832DS
Descripción detallada
Mosfet Array 30V 4.2A 1.65W Surface Mount TLM832DS
Fabricación
Central Semiconductor Corp
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
3,000
Inventario de proveedores
Atributos del producto
Mfr
Central Semiconductor Corp
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
4.2A
Rds On (Max) @ Id, Vgs
70mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 15V
Power - Max
1.65W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TDFN Exposed Pad
Supplier Device Package
TLM832DS
Base Product Number
CTLDM304P
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
-CTLDM304P-M832DS TR-ND
CTLDM304P-M832DS TR LEAD FREE
-CTLDM304P-M832DS TR-DKR-ND
CTLDM304P-M832DS DKR-ND
-CTLDM304P-M832DSDKR
-CTLDM304P-M832DS CT-ND
CTLDM304P-M832DSDKR
-CTLDM304P-M832DSCT
CTLDM304P-M832DSTR
CTLDM304P-M832DS DKR
CTLDM304P-M832DS TR PBFREE
CTLDM304P-M832DS CT
CTLDM304P-M832DS TR-ND
CTLDM304P-M832DS CT-ND
-CTLDM304P-M832DS DKR-ND
CTLDM304P-M832DSCT
-CTLDM304P-M832DS TR PBFREE
-CTLDM304P-M832DS TR-DKR
-CTLDM304P-M832DS TR-CT-ND
-CTLDM304P-M832DS TR
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Central Semiconductor Corp CTLDM304P-M832DS TR
Documentos y medios de comunicación
Datasheets
1(CTLDM304P-M832DS)
Environmental Information
1(RoHS Cert)
PCN Obsolescence/ EOL
1(Mult Dev EOL 5/Apr/2018)
Cantidad y precio
-
Alternativas
-