English
China
Rusia
Italy
GermanyNSBC123TPDP6T5G
Resumen del número de pieza
Número de pieza del fabricante
NSBC123TPDP6T5G
Explicación
TRANS PREBIAS NPN/PNP 50V SOT963
Descripción detallada
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
NSBC123TPDP6T5G Models
Embalaje estándar
8,000
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
2.2kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
339mW
Mounting Type
Surface Mount
Package / Case
SOT-963
Supplier Device Package
SOT-963
Base Product Number
NSBC123
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Otros nombres
2156-NSBC123TPDP6T5G-OS
ONSONSNSBC123TPDP6T5G
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi NSBC123TPDP6T5G
Documentos y medios de comunicación
Datasheets
1(NSBC123TPDP6)
Environmental Information
()
HTML Datasheet
1(NSBC123TPDP6)
EDA Models
1(NSBC123TPDP6T5G Models)
Cantidad y precio
-
Alternativas
-