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GermanyNTMD2C02R2SG
Resumen del número de pieza
Número de pieza del fabricante
NTMD2C02R2SG
Explicación
MOSFET N/P-CH 20V 5.2A 8SOIC
Descripción detallada
Mosfet Array 20V 5.2A, 3.4A 2W Surface Mount 8-SOIC
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
NTMD2C02R2SG Models
Embalaje estándar
2,500
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
5.2A, 3.4A
Rds On (Max) @ Id, Vgs
43mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 10V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
NTMD2C
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
2156-NTMD2C02R2SG
ONSONSNTMD2C02R2SG
2156-NTMD2C02R2SG-ONTR-ND
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi NTMD2C02R2SG
Documentos y medios de comunicación
Datasheets
1(NTMD2C02R2)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 01/Oct/2008)
PCN Design/Specification
1(Multiple Devices Copper Wire 20/Aug/2008)
HTML Datasheet
1(NTMD2C02R2)
EDA Models
1(NTMD2C02R2SG Models)
Cantidad y precio
-
Alternativas
-