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GermanyIRFU3412PBF
Resumen del número de pieza
Número de pieza del fabricante
IRFU3412PBF
Explicación
MOSFET N-CH 100V 48A IPAK
Descripción detallada
N-Channel 100 V 48A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
75
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 29A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3430 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
140W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
-
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU3412PBF
Documentos y medios de comunicación
Datasheets
1(IRFR3412PbF, IRFU3412PbF)
Other Related Documents
1(IR Part Numbering System)
Design Resources
1(IRFR3412PBF Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFR3412PbF, IRFU3412PbF)
Simulation Models
1(IRFR3412PBF Spice Model)
Cantidad y precio
-
Alternativas
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