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GermanyHGTP2N120CN
Resumen del número de pieza
Número de pieza del fabricante
HGTP2N120CN
Explicación
IGBT 1200V 13A 104W TO220AB
Descripción detallada
IGBT NPT 1200 V 13 A 104 W Through Hole TO-220-3
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
13 A
Current - Collector Pulsed (Icm)
20 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 2.6A
Power - Max
104 W
Switching Energy
96µJ (on), 355µJ (off)
Input Type
Standard
Gate Charge
30 nC
Td (on/off) @ 25°C
25ns/205ns
Test Condition
960V, 2.6A, 51Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Base Product Number
HGTP2N120
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
-
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/onsemi HGTP2N120CN
Documentos y medios de comunicación
Datasheets
1(HGTP2N120CN, HGT1S2N120CN)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
()
Product Drawings
1(TO220B03 Pkg Drawing)
Cantidad y precio
-
Alternativas
-