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GermanyIRL3705ZLPBF
Resumen del número de pieza
Número de pieza del fabricante
IRL3705ZLPBF
Explicación
MOSFET N-CH 55V 75A TO262
Descripción detallada
N-Channel 55 V 75A (Tc) 130W (Tc) Through Hole TO-262
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
50
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 52A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
2880 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRL3705
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
2156-IRL3705ZLPBF-448
SP001576270
*IRL3705ZLPBF
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL3705ZLPBF
Documentos y medios de comunicación
Datasheets
1(IRL3705Z(ZS,ZL))
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRL3705ZL Saber Model)
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
HTML Datasheet
1(IRL3705Z(ZS,ZL))
Simulation Models
1(IRL3705ZL Spice Model)
Cantidad y precio
-
Alternativas
-