English
China
Rusia
Italy
GermanyBUK9E04-30B,127
Resumen del número de pieza
Número de pieza del fabricante
BUK9E04-30B,127
Explicación
MOSFET N-CH 30V 75A I2PAK
Descripción detallada
N-Channel 30 V 75A (Tc) 254W (Tc) Through Hole I2PAK
Fabricación
NXP USA Inc.
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
50
Inventario de proveedores
Atributos del producto
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 5 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
6526 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
254W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
BUK9
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
BUK9E04-30B
BUK9E04-30B,127-ND
954-BUK9E04-30B127
BUK9E04-30B-ND
568-6637-5
2156-BUK9E04-30B127
934058069127
NEXNXPBUK9E04-30B,127
568-6637
568-6637-ND
BUK9E0430B127
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK9E04-30B,127
Documentos y medios de comunicación
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 29/Dec/2014)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
Cantidad y precio
-
Alternativas
-