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GermanyBSF050N03LQ3GXUMA1
Resumen del número de pieza
Número de pieza del fabricante
BSF050N03LQ3GXUMA1
Explicación
MOSFET N-CH 30V 15A/60A 2WDSON
Descripción detallada
N-Channel 30 V 15A (Ta), 60A (Tc) 2.2W (Ta), 28W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
5,000
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 28W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2, CanPAK M™
Package / Case
3-WDSON
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
BSF050N03LQ3 GTR-ND
BSF050N03LQ3 GCT-ND
BSF050N03LQ3 G
BSF050N03LQ3 G-ND
BSF050N03LQ3 GCT
BSF050N03LQ3G
BSF050N03LQ3GXUMA1DKR
SP000604522
BSF050N03LQ3 GDKR-ND
BSF050N03LQ3GXUMA1CT
BSF050N03LQ3GXUMA1TR
BSF050N03LQ3 GDKR
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSF050N03LQ3GXUMA1
Documentos y medios de comunicación
Datasheets
1(BSF050N03LQ3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSF050N03LQ3 G)
Cantidad y precio
-
Alternativas
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