Resumen del número de pieza

Número de pieza del fabricante
IRF7329PBF
Explicación
MOSFET 2P-CH 12V 9.2A 8SO
Descripción detallada
Mosfet Array 12V 9.2A 2W Surface Mount 8-SO
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
IRF7329PBF Models
Embalaje estándar
3,800
Inventario de proveedores

Atributos del producto

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
9.2A
Rds On (Max) @ Id, Vgs
17mOhm @ 9.2A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
57nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
3450pF @ 10V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
IRF732

Clasificaciones medioambientales y de exportación

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Otros nombres

62-0242PBF
62-0242PBF-ND
SP001559806

Categoría

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRF7329PBF

Documentos y medios de comunicación

Datasheets
1(IRF7329PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Mult Dev Tube Pkg Std 27/Dec/2018)
HTML Datasheet
1(IRF7329PbF)
EDA Models
1(IRF7329PBF Models)

Cantidad y precio

-

Alternativas

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