Resumen del número de pieza

Número de pieza del fabricante
IRFU5505PBF
Explicación
MOSFET P-CH 55V 18A IPAK
Descripción detallada
P-Channel 55 V 18A (Tc) 57W (Tc) Through Hole IPAK (TO-251AA)
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
3,000
Inventario de proveedores

Atributos del producto

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IRFU5505

Clasificaciones medioambientales y de exportación

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Otros nombres

*IRFU5505PBF
IFEINFIRFU5505PBF
SP001557786
2156-IRFU5505PBF

Categoría

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU5505PBF

Documentos y medios de comunicación

Datasheets
1(IRFR5505PbF, IRFU5505PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Other
1(Mult Dev Lot Code Standardization 11/Nov/2022)
HTML Datasheet
1(IRFR5505PbF, IRFU5505PbF)

Cantidad y precio

-

Alternativas

Modelo de producto : IRFU5305PBF
Fabricante : Infineon Technologies
Cantidad disponible : 0
Precio unitario : $1.06000
Tipo de reemplazo : Similar