English
China
Rusia
Italy
GermanyIRGSL4B60KD1PBF
Resumen del número de pieza
Número de pieza del fabricante
IRGSL4B60KD1PBF
Explicación
IGBT NPT 600V 11A TO262
Descripción detallada
IGBT NPT 600 V 11 A 63 W Through Hole TO-262
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
50
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
11 A
Current - Collector Pulsed (Icm)
22 A
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 4A
Power - Max
63 W
Switching Energy
73µJ (on), 47µJ (off)
Input Type
Standard
Gate Charge
12 nC
Td (on/off) @ 25°C
22ns/100ns
Test Condition
400V, 4A, 100Ohm, 15V
Reverse Recovery Time (trr)
93 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package
TO-262
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
SP001548286
*IRGSL4B60KD1PBF
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Infineon Technologies IRGSL4B60KD1PBF
Documentos y medios de comunicación
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Design Resources
1(IRGB4B60KD1PBF Saber Model)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRG(B,S,SL)4B60KD1PbF)
Cantidad y precio
-
Alternativas
-