English
China
Rusia
Italy
GermanyMT47R512M4EB-25E:C
Resumen del número de pieza
Número de pieza del fabricante
MT47R512M4EB-25E:C
Explicación
IC DRAM 2GBIT PARALLEL 60FBGA
Descripción detallada
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-FBGA (9x11.5)
Fabricación
Micron Technology Inc.
Plazo de entrega estándar
Modelo edacad
MT47R512M4EB-25E:C Models
Embalaje estándar
Inventario de proveedores
Atributos del producto
Mfr
Micron Technology Inc.
Series
-
Package
Tray
Product Status
Discontinued at allaboutcomponents.com
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
DRAM
Technology
SDRAM - DDR2
Memory Size
2Gbit
Memory Organization
512M x 4
Memory Interface
Parallel
Clock Frequency
400 MHz
Write Cycle Time - Word, Page
15ns
Access Time
400 ps
Voltage - Supply
1.55V ~ 1.9V
Operating Temperature
0°C ~ 85°C (TC)
Mounting Type
Surface Mount
Package / Case
60-TFBGA
Supplier Device Package
60-FBGA (9x11.5)
Base Product Number
MT47R512M4
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8542.32.0036
Otros nombres
-
Categoría
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Micron Technology Inc. MT47R512M4EB-25E:C
Documentos y medios de comunicación
Datasheets
1(MT47R512M4,256M8,128M16)
PCN Assembly/Origin
1(Tray Pkg Label Chgs 8/Oct/2020)
PCN Packaging
()
HTML Datasheet
1(MT47R512M4,256M8,128M16)
EDA Models
1(MT47R512M4EB-25E:C Models)
Cantidad y precio
-
Alternativas
-