English
China
Rusia
Italy
GermanyAPT50GT60BRDQ2G
Resumen del número de pieza
Número de pieza del fabricante
APT50GT60BRDQ2G
Explicación
IGBT 600V 110A 446W TO247
Descripción detallada
IGBT NPT 600 V 110 A 446 W Through Hole TO-247 [B]
Fabricación
Microchip Technology
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
30
Inventario de proveedores
Atributos del producto
Mfr
Microchip Technology
Series
Thunderbolt IGBT®
Package
Tube
Product Status
Active
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
110 A
Current - Collector Pulsed (Icm)
150 A
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 50A
Power - Max
446 W
Switching Energy
995µJ (on), 1070µJ (off)
Input Type
Standard
Gate Charge
240 nC
Td (on/off) @ 25°C
14ns/240ns
Test Condition
400V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)
22 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 [B]
Base Product Number
APT50GT60
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
APT50GT60BRDQ2GMI
APT50GT60BRDQ2GMI-ND
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microchip Technology APT50GT60BRDQ2G
Documentos y medios de comunicación
Datasheets
()
Environmental Information
()
PCN Assembly/Origin
1(Wafer Fabrication Site 27/Oct/2021)
HTML Datasheet
()
Product Drawings
1(TO-247 Front)
Cantidad y precio
-
Alternativas
-