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GermanyTPCF8201(TE85L,F,M
Resumen del número de pieza
Número de pieza del fabricante
TPCF8201(TE85L,F,M
Explicación
MOSFET 2N-CH 20V 3A VS-8
Descripción detallada
Mosfet Array 20V 3A 330mW Surface Mount VS-8 (2.9x1.5)
Fabricación
Toshiba Semiconductor and Storage
Plazo de entrega estándar
Modelo edacad
TPCF8201(TE85L,F,M Models
Embalaje estándar
4,000
Inventario de proveedores
Atributos del producto
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
3A
Rds On (Max) @ Id, Vgs
49mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
7.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
590pF @ 10V
Power - Max
330mW
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
VS-8 (2.9x1.5)
Base Product Number
TPCF8201
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Otros nombres
TPCF8201TR-NDR
TPCF8201(TE85LFMCT
TPCF8201FCT-ND
TPCF8201FTR-ND
TPCF8201FTR
TPCF8201(TE85LFMDKR
TPCF8201(TE85L,F)
TPCF8201(TE85LFMTR
TPCF8201FCT
TPCF8201FDKR
TPCF8201FDKR-ND
TPCF8201TE85LFM
TPCF8201CT-NDR
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Toshiba Semiconductor and Storage TPCF8201(TE85L,F,M
Documentos y medios de comunicación
Datasheets
()
PCN Obsolescence/ EOL
1(EOL 08/Nov/2013)
HTML Datasheet
()
EDA Models
1(TPCF8201(TE85L,F,M Models)
Product Drawings
()
Cantidad y precio
-
Alternativas
-