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ChinaSTGW80H65FB-4
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STGW80H65FB-4
BESCHREIBUNG
IGBT BIPO 650V 80A TO247
DETAILIERTE BESCHREIBUNG
IGBT Trench Field Stop 650 V 120 A 469 W Through Hole TO-247-4
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Active
IGBT Type
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
120 A
Current - Collector Pulsed (Icm)
240 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 80A
Power - Max
469 W
Switching Energy
2.1mJ (on), 1.5mJ (off)
Input Type
Standard
Gate Charge
414 nC
Td (on/off) @ 25°C
84ns/280ns
Test Condition
400V, 80A, 10Ohm, 15V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-4
Supplier Device Package
TO-247-4
Base Product Number
STGW80
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/STMicroelectronics STGW80H65FB-4
Dokumente und Medien
Datasheets
1(STGW80H65FB-4)
PCN Assembly/Origin
1(IGBT Capacity Ext 19/Oct/2018)
HTML Datasheet
1(STGW80H65FB-4)
Menge Preis
-
Stellvertreter
-