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China2SA812A-T1B-AT
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TEILNUMMER DES HERSTELLERS
2SA812A-T1B-AT
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANS PNP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 50 V 100 mA 180MHz 200 mW Surface Mount SC-59
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,245
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 1mA, 6V
Power - Max
200 mW
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SC-59
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
RENRNS2SA812A-T1B-AT
2156-2SA812A-T1B-AT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SA812A-T1B-AT
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 3245
Einzelpreis: $0.09
Verpackung: Bulk
MinMultiplikator: 3245
Verpackung: Bulk
MinMultiplikator: 3245
Stellvertreter
-