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ChinaPEMB1,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PEMB1,115
BESCHREIBUNG
NOW NEXPERIA PEMB1 - SMALL SIGNA
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
6,772
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
22kOhms
Resistor - Emitter Base (R2)
22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
-
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-666
Base Product Number
PEMB1
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
NEXNXPPEMB1,115
2156-PEMB1,115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/NXP USA Inc. PEMB1,115
Dokumente und Medien
Datasheets
1(PEMB1,115 Datasheet)
Menge Preis
QUANTITÄT: 6772
Einzelpreis: $0.04
Verpackung: Bulk
MinMultiplikator: 6772
Verpackung: Bulk
MinMultiplikator: 6772
Stellvertreter
-