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ChinaIRF9335PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF9335PBF
BESCHREIBUNG
MOSFET P-CH 30V 5.4A 8SO
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 5.4A (Ta) 2.5W (Ta) Surface Mount 8-SO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
95
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
59mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
2.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
386 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF9335PBF
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Menge Preis
-
Stellvertreter
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