Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SUP45P03-09-GE3
BESCHREIBUNG
MOSFET P-CH 30V 45A TO220AB
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 45A (Tc) 73.5W (Tc) Through Hole TO-220AB
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
SUP45P03-09-GE3 Models
STANDARDPAKET

Technische Daten

Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
73.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SUP45

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SUP45P03-09-GE3

Dokumente und Medien

Datasheets
1(SUP45P03-09)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SUP45P03-09)
EDA Models
1(SUP45P03-09-GE3 Models)

Menge Preis

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Stellvertreter

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