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ChinaIRFU120ATU
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFU120ATU
BESCHREIBUNG
MOSFET N-CH 100V 8.4A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 8.4A (Tc) 2.5W (Ta), 32W (Tc) Through Hole IPAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
300
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
480 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCIRFU120ATU
2156-IRFU120ATU-FS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor IRFU120ATU
Dokumente und Medien
Datasheets
1(IRFU120ATU)
Menge Preis
QUANTITÄT: 300
Einzelpreis: $1
Verpackung: Tube
MinMultiplikator: 300
Verpackung: Tube
MinMultiplikator: 300
Stellvertreter
-