Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
RN1115MFV,L3F
BESCHREIBUNG
TRANS PREBIAS NPN 50V 0.1A VESM
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VESM
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
RN1115MFV,L3F Models
STANDARDPAKET
8,000

Technische Daten

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Not For New Designs
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250 MHz
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN1115

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Andere Namen

RN1115MFVL3FDKR
RN1115MFV,L3F(T
RN1115MFV,L3F(B
RN1115MFVL3FTR
RN1115MFVL3FCT

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1115MFV,L3F

Dokumente und Medien

Datasheets
1(RN1114-18MFV)
EDA Models
1(RN1115MFV,L3F Models)

Menge Preis

QUANTITÄT: 200000
Einzelpreis: $0.01478
Verpackung: Tape & Reel (TR)
MinMultiplikator: 8000
QUANTITÄT: 56000
Einzelpreis: $0.01778
Verpackung: Tape & Reel (TR)
MinMultiplikator: 8000
QUANTITÄT: 24000
Einzelpreis: $0.02055
Verpackung: Tape & Reel (TR)
MinMultiplikator: 8000
QUANTITÄT: 16000
Einzelpreis: $0.02222
Verpackung: Tape & Reel (TR)
MinMultiplikator: 8000
QUANTITÄT: 8000
Einzelpreis: $0.02611
Verpackung: Tape & Reel (TR)
MinMultiplikator: 8000

Stellvertreter

-