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ChinaIRFB38N20DPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFB38N20DPBF
BESCHREIBUNG
IRFB38N20 - 12V-300V N-CHANNEL P
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
226
Lagerbestände
Technische Daten
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
91 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IRFB38N20DPBF
INFINFIRFB38N20DPBF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRFB38N20DPBF
Dokumente und Medien
Datasheets
1(IRFB38N20DPBF Datasheet)
Menge Preis
QUANTITÄT: 226
Einzelpreis: $1.33
Verpackung: Bulk
MinMultiplikator: 226
Verpackung: Bulk
MinMultiplikator: 226
Stellvertreter
-