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ChinaIPL65R210CFDAUMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPL65R210CFDAUMA1
BESCHREIBUNG
MOSFET N-CH 650V 16.6A 4VSON
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 16.6A (Tc) 151W (Tc) Surface Mount PG-VSON-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
210mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-VSON-4
Package / Case
4-PowerTSFN
Base Product Number
IPL65R210
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
2A (4 Weeks)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IFEINFIPL65R210CFDAUMA1
SP000949256
2156-IPL65R210CFDAUMA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPL65R210CFDAUMA1
Dokumente und Medien
Datasheets
1(IPL65R210CFD)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPL65R210CFD)
Simulation Models
1(CoolMOS™ Power MOSFET 650V CFD2 Spice Model)
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