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ChinaIPB120N03S4L03ATMA1
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TEILNUMMER DES HERSTELLERS
IPB120N03S4L03ATMA1
BESCHREIBUNG
MOSFET N-CH 30V 120A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 120A (Tc) 79W (Tc) Surface Mount PG-TO263-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
5300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPB120N03S4L03ATMA1
INFINFIPB120N03S4L03ATMA1
SP000936514
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB120N03S4L03ATMA1
Dokumente und Medien
Datasheets
1(IPB120N03S4L-03)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Mult Dev OBS 30/Sep/2022)
HTML Datasheet
1(IPB120N03S4L-03)
Menge Preis
-
Stellvertreter
Teil Nr. : IPB80N03S4L02ATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $1.40834
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 0
Einzelpreis. : $1.40834
Ersatztyp. : MFR Recommended