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ChinaSG2013J-883B
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TEILNUMMER DES HERSTELLERS
SG2013J-883B
BESCHREIBUNG
TRANS 7NPN DARL 50V 0.6A 16JDIP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 600mA Through Hole 16-CDIP
HERSTELLER
Microchip Technology
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
25
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
7 NPN Darlington
Current - Collector (Ic) (Max)
600mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
1.9V @ 600µA, 500mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
900 @ 500mA, 2V
Power - Max
-
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
-
Supplier Device Package
16-CDIP
Base Product Number
SG2013
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
1259-1108
1259-1108-MIL
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Microchip Technology SG2013J-883B
Dokumente und Medien
Datasheets
1(SG2000)
Environmental Information
()
Menge Preis
-
Stellvertreter
-