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ChinaSI1414DH-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI1414DH-T1-GE3
BESCHREIBUNG
MOSFET N-CH 30V 4A SOT-363
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 4A (Tc) 2.8W (Tc) Surface Mount SC-70-6
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
SI1414DH-T1-GE3 Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
46mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-6
Package / Case
6-TSSOP, SC-88, SOT-363
Base Product Number
SI1414
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI1414DH-T1-GE3DKR
SI1414DH-T1-GE3CT
SI1414DH-T1-GE3TR
SI1414DH-T1-GE3-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI1414DH-T1-GE3
Dokumente und Medien
Datasheets
1(SI1414DH-T1-GE3)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SI1414DH-T1-GE3)
EDA Models
1(SI1414DH-T1-GE3 Models)
Menge Preis
-
Stellvertreter
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