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ChinaBSO615NGHUMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSO615NGHUMA1
BESCHREIBUNG
MOSFET 2N-CH 60V 2.6A 8DSO
DETAILIERTE BESCHREIBUNG
Mosfet Array 60V 2.6A 2W Surface Mount PG-DSO-8
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
2.6A
Rds On (Max) @ Id, Vgs
150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 25V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-8
Base Product Number
BSO615
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BSO615NG
BSO615NGINDKR-ND
BSO615N G-ND
BSO615NGHUMA1TR
BSO615NGXT
BSO615NXTINTR
BSO615NXTINTR-ND
BSO615NGHUMA1DKR
BSO615NXTINCT-ND
BSO615NGINDKR
BSO615NGINTR-NDR
BSO615NT
BSO615NGINCT-NDR
BSO615NGINDKR-NDR
BSO615NGINCT-ND
BSO615N G
BSO615NGINTR-ND
SP000216316
BSO615NGT
BSO615NGHUMA1CT
BSO615NXTINCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies BSO615NGHUMA1
Dokumente und Medien
Datasheets
1(BSO 615NG)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSO 615NG)
Menge Preis
-
Stellvertreter
Teil Nr. : BSO615NGXUMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 26,750
Einzelpreis. : $1.08000
Ersatztyp. : Direct
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Einzelpreis. : $1.08000
Ersatztyp. : Direct
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Hersteller. : Infineon Technologies
Verfügbare Menge. : 11,075
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Verfügbare Menge. : 10,825
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