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ChinaBF771E6765N
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BF771E6765N
BESCHREIBUNG
RF TRANSISTOR, NPN
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT23-3-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,157
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
8GHz
Noise Figure (dB Typ @ f)
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain
15dB
Power - Max
580mW
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 30mA, 8V
Current - Collector (Ic) (Max)
80mA
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23-3-4
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
INFINFBF771E6765N
2156-BF771E6765N
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Infineon Technologies BF771E6765N
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 4151
Einzelpreis: $0.07
Verpackung: Bulk
MinMultiplikator: 4151
Verpackung: Bulk
MinMultiplikator: 4151
Stellvertreter
-