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ChinaJAN2N2060
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
JAN2N2060
BESCHREIBUNG
NPN LOW POWER SILICON TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 500mA 600mW Through Hole TO-78-6
HERSTELLER
Microchip Technology
STANDARD LEADTIME
30 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Power - Max
600mW
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/270
Mounting Type
Through Hole
Package / Case
TO-78-6 Metal Can
Supplier Device Package
TO-78-6
Base Product Number
2N2060
Umweltverträgliche Exportklassifikationen
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Microchip Technology JAN2N2060
Dokumente und Medien
Environmental Information
()
PCN Assembly/Origin
1(Mult Dev Assembly Site 31/Jan/2024)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $51.73
Verpackung: Bulk
MinMultiplikator: 100
Verpackung: Bulk
MinMultiplikator: 100
Stellvertreter
-