Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SPB80N03S2L-05
BESCHREIBUNG
MOSFET N-CH 30V 80A TO263-3
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 80A (Tc) 167W (Tc) Surface Mount PG-TO263-3-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.9mOhm @ 55A, 10V
Vgs(th) (Max) @ Id
2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs
89.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3320 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SPB80N

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-SPB80N03S2L-05-ITTR-ND
INFINFSPB80N03S2L-05
2156-SPB80N03S2L-05
SPB80N03S2L05INCT
SPB80N03S2L05INTR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPB80N03S2L-05

Dokumente und Medien

Datasheets
1(SP(I,P,B)80N03S2L-05)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SP(I,P,B)80N03S2L-05)

Menge Preis

-

Stellvertreter

Teil Nr. : PSMN017-30BL,118
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 1,868
Einzelpreis. : $59.96000
Ersatztyp. : Similar
Teil Nr. : PSMN4R3-30BL,118
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 10,895
Einzelpreis. : $87.17000
Ersatztyp. : Similar