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ChinaFGA30N65SMD
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FGA30N65SMD
BESCHREIBUNG
INSULATED GATE BIPOLAR TRANSISTO
DETAILIERTE BESCHREIBUNG
IGBT Field Stop 650 V 60 A 300 W Through Hole TO-3PN
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
143
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
IGBT Type
Field Stop
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
90 A
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 30A
Power - Max
300 W
Switching Energy
716µJ (on), 208µJ (off)
Input Type
Standard
Gate Charge
87 nC
Td (on/off) @ 25°C
14ns/102ns
Test Condition
400V, 30A, 6Ohm, 15V
Reverse Recovery Time (trr)
35 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PN
Base Product Number
FGA30N65
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
ONSFSCFGA30N65SMD
2156-FGA30N65SMD
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Fairchild Semiconductor FGA30N65SMD
Dokumente und Medien
Datasheets
1(FGA30N65SMD Datasheet)
Menge Preis
QUANTITÄT: 143
Einzelpreis: $2.11
Verpackung: Bulk
MinMultiplikator: 143
Verpackung: Bulk
MinMultiplikator: 143
Stellvertreter
-