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ChinaPHE13009/DG,127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PHE13009/DG,127
BESCHREIBUNG
NOW WEEN - PHE13009 - POWER BIPO
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
912
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
12 A
Voltage - Collector Emitter Breakdown (Max)
400 V
Vce Saturation (Max) @ Ib, Ic
2V @ 1.6A, 8A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 5A, 5V
Power - Max
80 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
WENNXPPHE13009/DG,127
2156-PHE13009/DG,127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. PHE13009/DG,127
Dokumente und Medien
Datasheets
1(PHE13009/DG,127 Datasheet)
Menge Preis
QUANTITÄT: 912
Einzelpreis: $0.33
Verpackung: Bulk
MinMultiplikator: 912
Verpackung: Bulk
MinMultiplikator: 912
Stellvertreter
-