English
Spain
Rusia
Italy
ChinaEMF18XV6T5G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
EMF18XV6T5G
BESCHREIBUNG
TRANS PREBIAS NPN/PNP SOT563
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA 140MHz 500mW Surface Mount SOT-563
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
8,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V, 60V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V / 120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
140MHz
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-563
Base Product Number
EMF18
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2832-EMF18XV6T5GTR
2156-EMF18XV6T5G-OS
ONSONSEMF18XV6T5G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi EMF18XV6T5G
Dokumente und Medien
Datasheets
1(EMF18XV6T5)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
1(Wire Bond 01/Dec/2010)
PCN Assembly/Origin
1(Mult Dev 24/Apr/2020)
PCN Packaging
1(Carrier Tape 15/Aug/2017)
HTML Datasheet
1(EMF18XV6T5)
Menge Preis
-
Stellvertreter
-