Technology
MOSFET (Metal Oxide)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
150A
Rds On (Max) @ Id, Vgs
1.66mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
19-PowerDIP Module
Supplier Device Package
Module
Base Product Number
FTCO3V455