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ChinaIPI120P04P4L03AKSA1
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TEILNUMMER DES HERSTELLERS
IPI120P04P4L03AKSA1
BESCHREIBUNG
MOSFET P-CH 40V 120A TO262-3
DETAILIERTE BESCHREIBUNG
P-Channel 40 V 120A (Tc) 136W (Tc) Through Hole PG-TO262-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 340µA
Gate Charge (Qg) (Max) @ Vgs
234 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
15000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
136W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI120P
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI120P04P4L03AKSA1
Dokumente und Medien
Datasheets
1(IPx120P04P4L-03)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx120P04P4L-03)
Menge Preis
-
Stellvertreter
Teil Nr. : IPP120P04P4L03AKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $2.23008
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $2.23008
Ersatztyp. : Similar