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China2SK4125-1E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SK4125-1E
BESCHREIBUNG
MOSFET N-CH 600V 17A TO3P-3L
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 17A (Ta) 2.5W (Ta), 170W (Tc) Through Hole TO-3P-3L
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
2SK4125-1E Models
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
610mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 170W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P-3L
Package / Case
TO-3P-3, SC-65-3
Base Product Number
2SK4125
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONS2SK4125-1E
2156-2SK4125-1E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi 2SK4125-1E
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(EOL 21/Apr/2016)
HTML Datasheet
1(2SK4125)
EDA Models
1(2SK4125-1E Models)
Menge Preis
-
Stellvertreter
Teil Nr. : RJK6014DPK-00#T0
Hersteller. : Renesas Electronics Corporation
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar