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ChinaSSU1N60BTU-WS
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SSU1N60BTU-WS
BESCHREIBUNG
MOSFET N-CH 600V 900MA IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 900mA (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
70
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
215 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 28W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
SSU1N60
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SSU1N60BTU_WS-ND
SSU1N60BTU_WS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi SSU1N60BTU-WS
Dokumente und Medien
Datasheets
1(SS(R,U)1N60B)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 01/Oct/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Packaging
1(Mult Devices 24/Oct/2017)
PCN Part Number
1(Mult Device Part Number Chg 30/May/2017)
HTML Datasheet
1(SS(R,U)1N60B)
Menge Preis
-
Stellvertreter
-