English
Spain
Rusia
Italy
China2SA1425-Y,T2F(J
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SA1425-Y,T2F(J
BESCHREIBUNG
TRANS PNP 120V 0.8A MSTM
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 120 V 800 mA 120MHz 1 W Through Hole MSTM
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 100mA, 5V
Power - Max
1 W
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
SC-71
Supplier Device Package
MSTM
Base Product Number
2SA1425
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2SA1425-YT2F(J
2SA1425YT2FJ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SA1425-Y,T2F(J
Dokumente und Medien
Datasheets
1(2SA1425)
HTML Datasheet
1(2SA1425)
Menge Preis
-
Stellvertreter
Teil Nr. : 2SA1201-Y(TE12L,ZC
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 788
Einzelpreis. : $0.51000
Ersatztyp. : Similar
Verfügbare Menge. : 788
Einzelpreis. : $0.51000
Ersatztyp. : Similar